Ultra-short silicon-organic hybrid (SOH) modulator for bidirectional polarization-independent operation

We propose a bidirectional, polarization-independent, recirculating IQ-modulator scheme based on the silicon-organic hybrid (SOH) platform. We demonstrate the viability of the concept by using an SOH Mach-Zehnder modulator, operated at 10 GBd BPSK and 2ASK-2PSK

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) integration

Silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration combines organic clectro-optic materials with silicon photonic and plasmonic waveguides, The concept enables fast and power-efficient modulators that support advanced modulation formats such as QPSK and 16QAM

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) integration

Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, nei-ther silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonic-organic hybrid integration, which combine SOI waveguides and plasmonic nanostructures with organic electro-optic cladding materials

10 GBd modulator directly driven by an FPGA without electrical amplification

Using standard single-ended FPGA outputs with 270 mV(pp) we demonstrate 10GBd OOK and BPSK transmission by directly driving a low-voltage silicon-organic hybrid ( SOH) modulator. The scheme does not require electronic driver amplifiers, which paves the way to energy-efficient photonic-electronic integration

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 Vpp. For the 16QAM experiment at 112 Gbit/s, we measure a bit error ratio of 5.1 × 10-5 and a record-low energy consumption of only 19 fJ/bit

Femtojoule electro-optic modulation using a silicon-organic hybrid device

Energy-efficient electro-optic modulators are at the heart of short-reach optical interconnects, and silicon photonics is considered the leading technology for realizing such devices. However, the performance of all-silicon devices is limited by intrinsic material properties. In particular, the absence of linear electro-optic effects in silicon renders the integration of energy-efficient photonic-electronic interfaces challenging. Silicon-organic hybrid (SOH) integration can overcome these limitations by combining nanophotonic silicon waveguides with organic cladding materials, thereby offering the prospect of designing optical properties by molecular engineering. In this paper, we demonstrate an SOH Mach-Zehnder modulator with unprecedented efficiency: the 1-mm-long device consumes only 0.7 fJ bit-1 to generate a 12.5 Gbit s-1 data stream with a bit-error ratio below the threshold for hard-decision forward-error correction. This power consumption represents the lowest value demonstrated for a non-resonant Mach-Zehnder modulator in any material system. It is enabled by a novel class of organic electro-optic materials that are designed for high chromophore density and enhanced molecular orientation. The device features an electro-optic coefficient of r33~180 pm V-1 and can be operated at data rates of up to 40 Gbit s-1

Femtojoule electro-optic modulation using a silicon-organic hybrid device

Energy-efficient electro-optic modulators are at the heart of short-reach optical interconnects, and silicon photonics is considered the leading technology for realizing such devices. However, the performance of all-silicon devices is limited by intrinsic material properties. In particular, the absence of linear electro-optic effects in silicon renders the integration of energy-efficient photonic-electronic interfaces challenging. Silicon-organic hybrid (SOH) integration can overcome these limitations by combining nanophotonic silicon waveguides with organic cladding materials, thereby offering the prospect of designing optical properties by molecular engineering. In this paper, we demonstrate an SOH Mach-Zehnder modulator with unprecedented efficiency: the 1-mm-long device consumes only 0.7 fJ bit(-1) to generate a 12.5 Gbit s(-1) data stream with a bit-error ratio below the threshold for hard-decision forward-error correction. This power consumption represents the lowest value demonstrated for a non-resonant Mach-Zehnder modulator in any material system. It is enabled by a novel class of organic electro-optic materials that are designed for high chromophore density and enhanced molecular orientation. The device features an electro-optic coefficient of r(33) approximate to 180 pm V-1 and can be operated at data rates of up to 40 Gbit s(-1)

Integrated silicon-organic hybrid (SOH) frequency shifter

We demonstrate a waveguide-based frequency shifter on the silicon-organic hybrid (SOH) platform, enabling frequency shifts up to 10 GHz. Spurious side-modes are suppressed by more than 23 dB using temporal shaping of the drive signal